single igbtmod? hvigbt module 600 amperes/6500 volts CM600HG-130H powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 1 5/08 h g f m8 nuts (6 typ.) q(8 typ.) m4 nuts (3 typ.) l m c n p c c c e c g e e e f d d a e b d c c c e e e e g c j k k outline drawing and circuit diagram dimensions inches millimeters a 7.48 190.0 b 5.51 140.0 c 1.89 48.0 d 2.24 57.0 e 4.88 124.0 f 0.87 22.0 g 0.47 12.0 h 0.55 14.0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor in a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplifed system assembly and thermal management. features: low drive power low v ce(sat) super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: traction medium voltage drives high voltage power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM600HG-130H is a 6500v (v ces ), 600 ampere single igbtmod? power module. type current rating v ces amperes volts (x 50) cm 600 130 dimensions inches millimeters j 2.33 59.2 k 2.41 61.2 l 1.61 41.0 m 0.71 18.0 n 1.50 38.0 p 0.20 5.0 q 0.28 dia. 7.0 dia.
CM600HG-130H single igbtmod? hvigbt module 600 amperes/6500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 2 5/08 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM600HG-130H units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c operating temperature t opr -40 to +125 c collector-emitter voltage (v ge = 0v) v ces 6500 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 80c) i c 600 amperes peak collector current (pulse) i cm 1200* amperes emitter current** (t c = 25c) i e 600 amperes emitter surge current** (pulse) i em 1200* amperes maximum collector dissipation (t c = 25c, igbt part, t j(max) 125c) p c 8900 watts partial discharge (v 1 = 6900 v rms , v 2 = 5100 v rms , 60 hz (acc. to iec 1287)) q pd 10 pc max. mounting torque m8 main terminal screws C 133 in-lb max. mounting torque m6 mounting screws C 53 in-lb max. mounting torque m4 auxiliary terminal screws C 17 in-lb module weight (typical) C 1.35 kg isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 10200 volts maximum turn-off switching current (v cc 4500v, v ge = 15v, t j = 125c) C 1200 amperes short circuit capability, maximum pulse width (v cc 4500v, v ge = 15v, t j = 125c) C 10 s maximum reverse recovery instantaneous power C 3600 kw (v cc 4500v, di e /dt 3000a/ s, t j = 125c) * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(oprmax) rating (125c). **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM600HG-130H single igbtmod? hvigbt module 600 amperes/6500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 3 5/08 static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v, t j = 25c C C 10.0 ma v ce = v ces , v ge = 0v, t j = 125c C 30 90.0 ma gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.0 6.0 7.0 volts gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 a collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c C 5.1 C volts i c = 600a, v ge = 15v, t j = 125c C 5.0 C volts input capacitance c ies v ce = 10v, v ge = 0v, C 124 C nf output capacitance c oes f = 100khz, C 7.6 C nf reverse transfer capacitance c res t j = 25c C 2.2 C nf total gate charge q g v cc = 3600v, i c = 600a, v ge = 15v C 9.9 C c emitter-collector voltage** v ec i e = 600a, v ge = 0v, t j = 25c C 4.0 C volts i e = 600a, v ge = 0v, t j = 125c C 3.6 C volts turn-on delay time t d(on) v cc = 3600v, i c = 600a, C 1.2 C s turn-on rise time t r v ge1 = -v ge2 = 15v, r g(on) = 10 , C 0.35 C s turn-on switching energy e on t j = 125c, t off = 60 s C 4.5 C j/p turn-off delay time t d(off) v cc = 3600v, i c = 600a, C 6.6 C s turn-off fall time 1 t f1 v ge1 = -v ge2 = 15v, C 0.5 C s turn-off fall time 2 t f2 r g(off) = 24 , C 3.3 C s turn-off switching energy e off t j = 125c, t off = 60 s C 3.5 C j/p reverse recovery time 1** t rr1 v cc = 3600v, i e = 600a, C 1.0 C s reverse recovery time 2** t rr2 di e /dt = -2000a/ s, C 2.4 C s reverse recovery charge** q rr t j = 125c, C 1100 C c reverse recovery energy** e rec t off = 60 s C 2.0 C j/p * pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). thermal characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt C C 14.0 k/kw thermal resistance, junction to case r th(j-c) d per fwdi C C 22.0 k/kw contact thermal resistance, case to fin r th(c-f) per module, thermal grease applied C 6.0 C k/kw mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units comparative tracking index cti C 600 C C C clearance C C 26.0 C C mm creepage distance C C 56.0 C C mm internal inductance l c-e(int) C C 18 C nh internal lead resistance r c-e(int) C C 0.18 C m
CM600HG-130H single igbtmod? hvigbt module 600 amperes/6500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 4 5/08 collector current, i c , (amperes) output characteristics (typical) 1000 2000 3000 0 6000 02 0 12 16 48 collector-emitter voltage, v ce(sat) , (volts) t j = 25c 4000 5000 v ge = 20v 18v 12v 13v 14v 15v 10v 16v 1 2 3 0 8 7 6 free-wheel diode forward characteristics (typical) 0 1400 600 800 1000 1200 200 400 v ge = 0v t j = 25c t j = 125c 4 5 collector-emitter voltage, v ces , (volts) emitter current, i e , (amperes) 0.5 1.0 1.5 0 3.5 3.0 free-wheel diode reverse recovery energy characteristics (typical) 0 1400 600 800 1000 1200 200 400 v cc = 3600v v ge = 15v r g(on) = 10 l s = 150nh t j = 125c 2.0 2.5 reverse recovery energy, e rec , (j/pulse) emitter current, i e , (amperes) 0.5 1.0 1.5 0 3.5 3.0 free-wheel diode reverse recovery energy characteristics (typical) 04 0 15 20 25 35 30 51 0 v cc = 3600v v ge = 15v i c = 600a l s = 150nh t j = 125c 2.0 2.5 reverse recovery energy, e rec , (j/pulse) gate resistance, r g , ( ) 04 0 15 20 25 35 30 51 0 v cc = 3600v v ge = 15v i c = 600a l s = 150nh t j = 125c gate resistance, r g , ( ) 0.5 1.0 1.5 0 3.5 3.0 free-wheel diode reverse recovery charge characteristics (typical) 0 1400 600 800 1000 1200 200 400 v cc = 3600v v ge = 15v r g(on) = 10 l s = 150nh t j = 125c 2.0 2.5 reverse recovery charge, q rr , (j/pulse) emitter current, i e , (amperes) 0.5 1.0 1.5 0 3.5 3.0 free-wheel diode reverse recovery charge characteristics (typical) 2.0 2.5 reverse recovery charge, q rr , (j/pulse) collector current, i c , (amperes) 8 4 02 0 16 12 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 2000 12000 10000 6000 4000 8000 t j = 25c t j = 125c v ce = 5v switching time, t d(on) , (ns) turn-on delay time vs. collector current (typical) 10 1 10 0 10 -1 collector current, i c , (amperes) switching time, t d(off) , (ns) turn-off delay time vs. collector current (typical) v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c 10 2 10 4 10 3 10 1 10 0 10 -1 collector current, i c , (amperes) 10 2 10 4 10 3
CM600HG-130H single igbtmod? hvigbt module 600 amperes/6500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 5 5/08 collector current, i c , (amperes) switching time, t f , (ns) fall time vs. collector current (typical) collector current, i c , (amperes) switching time, t r , (ns) rise time vs. collector current (typical) 10 6 8 4 0 2 1400 800 1200 1000 400 600 200 collector current, i c , (amperes) switching loss, e off , (mj/pulse) switching loss (off) vs. collector current (typical) 0 collector current, i c , (amperes) switching loss, e on , (mj/pulse) switching loss (on) vs. collector current (typical) switching loss, e off , (mj/pulse) gate resistance, r g , ( ) switching loss, e on , (mj/pulse) gate resistance, r g , ( ) collect or-emitter vo lt ag e, v ce , (v ol ts) cap ac it ance, c ies , c oes , c res , (pf) 10 -1 10 0 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 3 10 1 10 0 10 2 c ies c oes c res v ge = 15v f = 100khz t j = 25c time, (s) transient imped ance, rth (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 0.4 0 0.2 0.6 0.8 single pulse t c = 25 c igbt = r th(j-c) q = 14 k/kw fwdi = r th(j-c) d = 22 k/kw collector-emitter voltage, v ces , (volts) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c 10 1 10 0 10 -1 10 2 10 4 10 3 v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c 10 6 8 4 0 2 1400 800 1200 1000 400 600 200 0 v cc = 3600v v ge = 15v r g(off) = 24 r g(on) = 10 l s = 150nh t j = 125c 10 6 8 4 0 2 40 20 30 35 25 10 15 5 0 v cc = 3600v v ge = 15v i c = 600a l s = 150nh t j = 125c 10 6 8 4 0 2 40 20 30 35 25 10 15 5 0 v cc = 3600v v ge = 15v i c = 600a l s = 150nh t j = 125c 10 1 10 0 10 -1 10 2 10 4 10 3 1 2 3 0 8 7 6 0 1400 600 800 1000 1200 200 400 v ge = 0v t j = 25c t j = 125c 4 5 switching loss (off) vs. gate resistance (typical) switching loss (on) vs. gate resistance (typical)
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